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Si4108DY
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
75
R DS(on) ( Ω )
0.0098 at V GS = 10 V
I D (A) a
20.5
Q g (Typ.)
36 nC
?
?
?
Halogen-free
TrenchFET ? Power MOSFET
100 % R g Tested
RoHS
COMPLIANT
?
100 % UIS Tested
APPLICATIONS
? Primary Side Switch
SO- 8
? Half Bridge
? Intermediate Bus Converter
D
S
S
S
1
2
3
8
7
6
D
D
D
G
4
5
D
G
Top V ie w
S
Orderin g Information: Si410 8 DY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
75
± 20
20.5
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
16.4
13.8 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
11.1 b, c
60
6.5
3 b, c
32
51.2
A
mJ
T C = 25 °C
7.8
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
5
3.6 b, c
W
T A = 70 °C
2.3 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
29
13
35
16
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 68635
S-81195-Rev. A, 26-May-08
www.vishay.com
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